Характеристики
| Transistor Polarity | N Channel |
| Continuous Drain Current Id | 20A |
| Drain Source Voltage Vds | 30V |
| On Resistance Rds(on) | 4mohm |
| Rds(on) Test Voltage Vgs | 10V |
| Threshold Voltage Vgs Typ | 2.32V |
| Power Dissipation Pd | 2.5W |
| Transistor Case Style | SOIC |
| No. of Pins | 8 |
| SVHC | No SVHC (20-Jun-2011) |
| Current Id Max | 20A |
| Current Temperature | 25°C |
| External Depth | 5.2mm |
| External Length / Height | 1.75mm |
| External Width | 4.05mm |
| Full Power Rating Temperature | 25°C |
| No. of Transistors | 1 |
| Package / Case | SOIC |
| Pin Format | 1 S |
| Power Dissipation Pd | 2.5W |
| Power Dissipation Pd | 2.5W |
| Pulse Current Idm | 160A |
| Row Pitch | 6.3mm |
| SMD Marking | IRF7832PBF |
| Termination Type | SMD |
| Voltage Vds Typ | 30V |
| Voltage Vgs Max | 2.32V |
| Voltage Vgs Rds on Measurement | 10V |
IRF7832PBFInfineonMOSFETs