Характеристики
| Transistor Polarity | N Channel |
| Continuous Drain Current Id | 600mA |
| Drain Source Voltage Vds | 200V |
| On Resistance Rds(on) | 1.5ohm |
| Rds(on) Test Voltage Vgs | 10V |
| Threshold Voltage Vgs Typ | 4V |
| Power Dissipation Pd | 1W |
| Operating Temperature Range | -55°C to +150°C |
| Transistor Case Style | DIP |
| No. of Pins | 4 |
| Current Id Max | 600mA |
| Current Temperature | 25°C |
| Full Power Rating Temperature | 25°C |
| Junction Temperature Tj Max | 150°C |
| Junction Temperature Tj Min | -55°C |
| Lead Spacing | 2.54mm |
| No. of Transistors | 1 |
| Package / Case | DIP |
| Power Dissipation Pd | 1W |
| Power Dissipation Pd | 1W |
| Pulse Current Idm | 4.8A |
| Row Pitch | 7.62mm |
| Termination Type | Through Hole |
| Voltage Vds Typ | 200V |
| Voltage Vgs Max | 20V |
| Voltage Vgs Rds on Measurement | 10V |
IRFD210PBFVishayMOSFETs