IRG7PH28UD1PBF

IRG7PH28UD1PBF

IGBTs
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWT APPLI Insulated Gate Bipolar Transistor, 30A I(C), 1200V V(BR)CES, N-Channel
IRG7PH28UD1PBFPDF
IRG7PH28UD1PBFInternational RectifierIGBTs