Характеристики
| Transistor Type | IGBT |
| Transistor Polarity | N Channel |
| Continuous Collector Current, Ic | 11A |
| Collector Emitter Saturation Voltage, Vce(sat) | 2.50V |
| Power Dissipation, Pd | 63W |
| Package/Case | TO-262 |
| C-E Breakdown Voltage | 600V |
| RoHS Compliant | Yes |
IRGSL4B60KD1PBFInfineonIGBTs