IXDN55N120D1
IXYS
Electronic Components
Характеристики
| Configuration | Single |
| Continuous Collector Current (Ic) A | 100 |
| Collector-Emitter Voltage (Vceo) kV | 1.2 |
| Collector Emitter Saturation Voltage Max. (Vce(sat)) V | 2.8 |
| Emitter Leakage Current nA | 500 |
| Power Dissipation (Pd) W | 450 |
| Gate Emitter Voltage (Vge) V | 20 |
| Operating Temperature Min. °C | -40 |
| Operating Temperature Max. °C | 150 |
| Package Type | SOT-227B |
| Pins | 4 |
| Mounting Type | SMD |
IXDN55N120D1IXYSElectronic Components