IXFN200N10P
IXYS
MOSFETs
Характеристики
| Transistor Polarity | N-Channel |
| Configuration | Single |
| Continuous Drain Current (Id) A | 200 |
| Drain-Source Voltage (Vds) V | 100 |
| ON Resistance (Rds(on)) mOhm | 7.5 |
| Gate-Source Threshold Voltage V | 5 |
| Gate-Source Voltage V | 20 |
| Power Dissipation (Pd) W | 680 |
| Operating Temperature Min. °C | -55 |
| Operating Temperature Max. °C | 175 |
| Fall Time ns | 90 |
| Rise Time ns | 35 |
| Turn-OFF Delay Time ns | 150 |
| Turn-ON Delay Time ns | 30 |
| Package Type | SOT-227B |
| Mounting Type | SMD |
| Packaging | Tube |
IXFN200N10PIXYSMOSFETs