IXFN360N10T
IXYS
MOSFETs
Характеристики
| Transistor Polarity | N-Channel |
| Configuration | Single |
| Continuous Drain Current (Id) A | 360 |
| Drain-Source Voltage (Vds) V | 100 |
| ON Resistance (Rds(on)) mOhm | 2.6 |
| Gate-Source Threshold Voltage V | 4.5 |
| Gate-Source Voltage V | 20 |
| Power Dissipation (Pd) W | 830 |
| Operating Temperature Min. °C | -55 |
| Operating Temperature Max. °C | 175 |
| Fall Time ns | 26 |
| Rise Time ns | 142 |
| Turn-OFF Delay Time ns | 63 |
| Turn-ON Delay Time ns | 52 |
| Package Type | SOT-227B |
| Mounting Type | SMD |
| Packaging | Tube |
IXFN360N10TIXYSMOSFETs