IXFN82N60P
IXYS
MOSFETs
Характеристики
| Transistor Polarity | N-Channel |
| Configuration | Single |
| Continuous Drain Current (Id) A | 72 |
| Drain-Source Voltage (Vds) V | 600 |
| ON Resistance (Rds(on)) mOhm | 75 |
| Gate-Source Threshold Voltage V | 5 |
| Gate-Source Voltage V | 30 |
| Power Dissipation (Pd) kW | 1.04 |
| Operating Temperature Min. °C | -55 |
| Operating Temperature Max. °C | 150 |
| Fall Time ns | 24 |
| Rise Time ns | 23 |
| Turn-OFF Delay Time ns | 79 |
| Turn-ON Delay Time ns | 28 |
| Package Type | SOT-227B |
| Mounting Type | SMD |
| Packaging | Tube |
| Reflow Temperature Max. °C | 260 |
IXFN82N60PIXYSMOSFETs