Характеристики
| Transistor Type | JFET |
| Breakdown Voltage, V(br) | 35V |
| Gate-Source Cutoff Voltage Max, Vgs(off) | -5V |
| Power Dissipation, Pd | 350mW |
| Operating Temperature Range | -65°C to +150°C |
| No. of Pins | 3 |
| Leaded Process Compatible | Yes |
| RoHS Compliant | Yes |
J112RLRAGonsemiJFETs