MII100-12A3
IXYS
Transistors
Характеристики
| Collector Emitter Saturation Voltage Max. (Vce(sat)) V | 2.7 |
| Collector-Emitter Voltage (Vceo) kV | 1.2 |
| Configuration | Dual |
| Channel Type | N-Channel |
| Power Dissipation (Pd) W | 560 |
| Continuous Collector Current (Ic) A | 135 |
| Operating Temperature Min. °C | -40 |
| Operating Temperature Max. °C | 125 |
| Package Type | Y4 |
| Pins | 7 |
| Mounting Type | SMD |
| Packaging | Box |
MII100-12A3IXYSTransistors