Характеристики
| Transistor Polarity | PNP |
| Collector Emitter Voltage V(br)ceo | -80V |
| Transition Frequency ft | 40MHz |
| Power Dissipation Pd | 50W |
| DC Collector Current | -10A |
| DC Current Gain hFE | 40hFE |
| Transistor Case RoHS Compliant | Yes |
MJB45H11T4GonsemiBJTs
| Transistor Polarity | PNP |
| Collector Emitter Voltage V(br)ceo | -80V |
| Transition Frequency ft | 40MHz |
| Power Dissipation Pd | 50W |
| DC Collector Current | -10A |
| DC Current Gain hFE | 40hFE |
| Transistor Case RoHS Compliant | Yes |