Характеристики
| Transistor Polarity | NPN |
| Collector Emitter Voltage V(br)ceo | 100V |
| Transition Frequency ft | 25MHz |
| Power Dissipation Pd | 20W |
| DC Collector Current | 2A |
| DC Current Gain hFE | 200hFE |
MJD112T4GonsemiBJTs
| Transistor Polarity | NPN |
| Collector Emitter Voltage V(br)ceo | 100V |
| Transition Frequency ft | 25MHz |
| Power Dissipation Pd | 20W |
| DC Collector Current | 2A |
| DC Current Gain hFE | 200hFE |