Характеристики
| Transistor Polarity | NPN |
| Collector Emitter Voltage V(br)ceo | 160V |
| Power Dissipation Pd | 200mW |
| DC Collector Current | 200mA |
| DC Current Gain hFE | 80hFE |
| Transistor Case Style | SOT-363 |
MMDT5551-7-FDiodes Inc.BJTs
| Transistor Polarity | NPN |
| Collector Emitter Voltage V(br)ceo | 160V |
| Power Dissipation Pd | 200mW |
| DC Collector Current | 200mA |
| DC Current Gain hFE | 80hFE |
| Transistor Case Style | SOT-363 |