Характеристики
| Transistor Polarity | PNP |
| Collector Emitter Voltage, V(br)ceo | 40V |
| Power Dissipation, Pd | 1W |
| DC Current Gain Min (hfe) | 40 |
| Package/Case | SOIC-16 |
| C-E Breakdown Voltage | 40V |
| DC Collector Current | 200A |
| RoHS Compliant | Yes |
MMPQ3906onsemiBJTs
| Transistor Polarity | PNP |
| Collector Emitter Voltage, V(br)ceo | 40V |
| Power Dissipation, Pd | 1W |
| DC Current Gain Min (hfe) | 40 |
| Package/Case | SOIC-16 |
| C-E Breakdown Voltage | 40V |
| DC Collector Current | 200A |
| RoHS Compliant | Yes |