Характеристики
| Transistor Type | RF FET |
| Drain Source Voltage, Vds | 66V |
| RF Transistor Case | TO-270 |
| Gain | 21.1dB |
| Gate-Source Voltage | 12V |
| Leaded Process Compatible | Yes |
| Operating Frequency Max | 880MHz |
| RoHS Compliant | Yes |
MRFE6S9060NR1NXP SemiconductorsRF MOSFET