Характеристики
| Drain Source Voltage Vds | 130V |
| Continuous Drain Current Id | - |
| Power Dissipation Pd | 1.667kW |
| Operating Frequency Min | 1.8MHz |
| Operating Frequency Max | 600MHz |
| RF Transistor Case | NI-12 |
MRFE6VP5600HR6NXP SemiconductorsRF MOSFET
| Drain Source Voltage Vds | 130V |
| Continuous Drain Current Id | - |
| Power Dissipation Pd | 1.667kW |
| Operating Frequency Min | 1.8MHz |
| Operating Frequency Max | 600MHz |
| RF Transistor Case | NI-12 |