Характеристики
| Transistor Type | RF FET |
| Drain Source Voltage, Vds | 68V |
| RF Transistor Case | 466 |
| Gain | 18dB |
| Gate-Source Voltage | 12V |
| Leaded Process Compatible | Yes |
| Operating Frequency Max | 1960MHz |
| RoHS Compliant | Yes |
MW6S004NT1NXP SemiconductorsRF MOSFET
| Transistor Type | RF FET |
| Drain Source Voltage, Vds | 68V |
| RF Transistor Case | 466 |
| Gain | 18dB |
| Gate-Source Voltage | 12V |
| Leaded Process Compatible | Yes |
| Operating Frequency Max | 1960MHz |
| RoHS Compliant | Yes |