Характеристики
| Transistor Type | MOSFET |
| Continuous Drain Current, Id | 60A |
| Drain Source Voltage, Vds | 60V |
| On Resistance, Rds(on) | 14mohm |
| Rds(on) Test Voltage, Vgs | 20V |
| Threshold Voltage, Vgs Typ | 3.3V |
| Power Dissipation, Pd | 125W |
| RoHS Compliant | Yes |
NTB5412NT4GonsemiMOSFETs