Характеристики
| Transistor Polarity | N Channel |
| Continuous Drain Current, Id | 58A |
| Drain Source Voltage, Vds | 30V |
| On Resistance, Rds(on) | 9mohm |
| Rds(on) Test Voltage, Vgs | 10V |
| Threshold Voltage, Vgs Typ | 2.5V |
| Power Dissipation, Pd | 52W |
| RoHS Compliant | Yes |
NTD4809N-1GonsemiMOSFETs