Характеристики
| Transistor Polarity | N Channel |
| Continuous Drain Current, Id | 16.3A |
| Drain Source Voltage, Vds | 25V |
| On Resistance, Rds(on) | 4.7mohm |
| Rds(on) Test Voltage, Vgs | 10V |
| Threshold Voltage, Vgs Typ | 2.5V |
| RoHS Compliant | Yes |
NTD4856N-1GonsemiMOSFETs
| Transistor Polarity | N Channel |
| Continuous Drain Current, Id | 16.3A |
| Drain Source Voltage, Vds | 25V |
| On Resistance, Rds(on) | 4.7mohm |
| Rds(on) Test Voltage, Vgs | 10V |
| Threshold Voltage, Vgs Typ | 2.5V |
| RoHS Compliant | Yes |