Характеристики
| Transistor Polarity | N Channel |
| Continuous Drain Current, Id | 12.6A |
| Drain Source Voltage, Vds | 25V |
| On Resistance, Rds(on) | 7.5mohm |
| Rds(on) Test Voltage, Vgs | 10V |
| Threshold Voltage, Vgs Typ | 2.5V |
| Power Dissipation, Pd | 2W |
| RoHS Compliant | Yes |
NTD4860N-1GonsemiMOSFETs