Характеристики
| Transistor Polarity | Dual N Channel |
| Continuous Drain Current Id | 250mA |
| Drain Source Voltage Vds | 30V |
| On Resistance Rds(on) | 1ohm |
| Rds(on) Test Voltage Vgs | 4V |
| Threshold Voltage Vgs | 1.2V |
NTJD4001NT1GonsemiMOSFETs
| Transistor Polarity | Dual N Channel |
| Continuous Drain Current Id | 250mA |
| Drain Source Voltage Vds | 30V |
| On Resistance Rds(on) | 1ohm |
| Rds(on) Test Voltage Vgs | 4V |
| Threshold Voltage Vgs | 1.2V |