OPB610
Optek
Phototransistor
Характеристики
| Mounting Style | PCB |
| Collector-Emitter Voltage (VCEO) Max. V | 24 |
| Power Dissipation (Pd) Max. mW | 200 |
| Reverse Voltage (Vr) V | 3 |
| Gap Width Max. mm | 3.81 |
| Collector-Emitter Saturation Voltage Max. V | 0.4 |
| Forward Voltage (Vf) Max. V | 1.6 |
| Forward Current (If) Max. mA | 50 |
| Dark Current Max. nA | 65 |
| Sensor Output | Phototransistor |
| Peak Wavelength nm | 890 |
OPB610OptekPhototransistor