Характеристики
| Transistor Polarity | N Channel |
| Collector Emitter Voltage V(br)ceo | 40V |
| Transition Frequency Typ ft | 150MHz |
| Power Dissipation Pd | 300mW |
| DC Collector Current | 1A |
| DC Current Gain Max (hfe) | 300 |
| RoHS Compliant | Yes |
PBSS4140V,115NXP SemiconductorsBJTs