Характеристики
| Transistor Type | Bipolar |
| Transistor Polarity | NPN |
| Collector-to-Emitter Breakdown Voltage | 50V |
| Current Ic Continuous a Max | 3A |
| Voltage, Vce Sat Max | 90mV |
| Power Dissipation | 1.35W |
| Min Hfe | 200 |
| ft, Typ | 100MHz |
| RoHS Compliant | Yes |
PBSS4350ZNXP SemiconductorsBJTs