Характеристики
| Digital Transistor Polarity | Single PNP |
| Collector Emitter Voltage V(br)ceo | 50V |
| Continuous Collector Current Ic | -100mA |
| Base Input Resistor R1 | 2.2kohm |
| Base-Emitter Resistor R2 | 2.2kohm |
| Resistor Ratio, R1 / R2 | - |
| RF Transistor Case | SOT-23 |
| No. of Pins | 3 Pin |
| Product Range | PDTA123E Series |
| Automotive Qualification Standard | - |
| MSL | MSL 1 - Unlimited |
| SVHC | No SVHC (27-Jun-2018) |
| Collector Emitter Saturation Voltage Vce(on) | -150mV |
| Continuous Collector Current Ic Max | 100mA |
| Current Ic Continuous a Max | 100mA |
| Current Ic hFE | 20µA |
| DC Collector Current | 100mA |
| DC Current Gain hFE | 30hFE |
| Full Power Rating Temperature | 25°C |
| Hfe Min | 30 |
| No. of Pins | 3Pins |
| Operating Temperature Max | 150°C |
| Operating Temperature Min | -65°C |
| Operating Temperature Range | -65°C to +150°C |
| Power Dissipation Pd | 250mW |
| Power Dissipation Ptot Max | 250mW |
| Resistance R1 | 2.2kohm |
| Resistance R2 | 2.2kohm |
| Transistor Case Style | SOT-23 |
| Transistor Polarity | PNP |
| Transistor Type | Bias Resistor (BRT) |
| Voltage Vcbo | -50V |
PDTA123ET,215NexperiaBJTs