Характеристики
| Transistor Polarity | PNP |
| Collector Emitter Voltage V(br)ceo | -50V |
| Power Dissipation Pd | 300mW |
| DC Collector Current | -100mA |
| DC Current Gain hFE | 200 |
| Operating Temperature Range | -65°C to +150°C |
| Transistor Case Style | SOT-666 |
| No. of Pins | 6 |
| SVHC | No SVHC (20-Jun-2011) |
| Collector Emitter Voltage Vces | -100mV |
| Current Ic Continuous a Max | -5mA |
| Hfe Min | 200 |
| Package / Case | SOT-666 |
| Power Dissipation Pd | 300mW |
| Termination Type | SMD |
| Transistor Type | General Purpose |
PEMB3,115NexperiaBJTs