Характеристики
| Transistor Polarity | NPN / PNP |
| Collector Emitter Voltage V(br)ceo | 50V |
| Power Dissipation Pd | 300mW |
| DC Collector Current | 100mA |
| DC Current Gain hFE | 80 |
| Operating Temperature Range | -65°C to +150°C |
| Transistor Case Style | SOT-666 |
| No. of Pins | 6 |
| SVHC | No SVHC (20-Jun-2011) |
| Collector Emitter Voltage Vces | 150mV |
| Current Ic Continuous a Max | 10mA |
| Hfe Min | 80 |
| Package / Case | SOT-666 |
| Power Dissipation Pd | 300mW |
| Termination Type | SMD |
| Transistor Type | General Purpose |
PEMD12,115NexperiaBJTs