Характеристики
| Transistor Polarity | Dual NPN |
| Collector-to-Emitter Breakdown Voltage | 50V |
| Operating Temperature Range | -65°C to +150°C |
| Transistor Case Style | SOT-666 |
| SVHC | No SVHC (18-Jun-2010) |
| Case Style | SOT-666 |
| Max Current Ic Continuous a | 5mA |
| Max Voltage Vce Sat | 100mV |
| Min Hfe | 100 |
| Power Dissipation | 300mW |
| Termination Type | SMD |
| Transistor Type | General Purpose |
PEMH9,115NexperiaBJTs