Характеристики
| Module Configuration | Dual |
| Transistor Polarity | Dual N Channel |
| Continuous Drain Current Id | 2.2A |
| Drain Source Voltage Vds | 30V |
| On Resistance Rds(on) | 100mohm |
| Rds(on) Test Voltage Vgs | 10V |
| Threshold Voltage Vgs Typ | 2V |
| Power Dissipation Pd | 2W |
| Operating Temperature Range | -65°C to +150°C |
| Transistor Case Style | SOIC |
| No. of Pins | 8 |
| SVHC | No SVHC (20-Jun-2011) |
| Current Id Max | 2.4A |
| Package / Case | SOIC |
| Power Dissipation Pd | 2W |
| Termination Type | SMD |
| Transistor Type | Enhancement |
| Voltage Vds Typ | 30V |
| Voltage Vgs Max | 20V |
| Voltage Vgs Rds on Measurement | 10V |
PHN210T,118NexperiaMOSFETs