Характеристики
| Module Configuration | Dual |
| Transistor Polarity | P Channel |
| Collector Emitter Voltage V(br)ceo | -40V |
| Transition Frequency Typ ft | 100MHz |
| Power Dissipation Pd | 600mW |
| DC Collector Current | -100mA |
| RoHS Compliant | Yes |
PIMT1,115NexperiaBJTs
| Module Configuration | Dual |
| Transistor Polarity | P Channel |
| Collector Emitter Voltage V(br)ceo | -40V |
| Transition Frequency Typ ft | 100MHz |
| Power Dissipation Pd | 600mW |
| DC Collector Current | -100mA |
| RoHS Compliant | Yes |