Характеристики
| Module Configuration | Dual |
| Transistor Polarity | Dual N Channel |
| Continuous Drain Current Id | 300mA |
| Drain Source Voltage Vds | 60V |
| On Resistance Rds(on) | 920mohm |
| Rds(on) Test Voltage Vgs | 10V |
| Threshold Voltage Vgs Typ | 2V |
| Power Dissipation Pd | 410mW |
| Operating Temperature Range | -55°C to +150°C |
| Transistor Case Style | SOT-363 |
| No. of Pins | 6 |
| SVHC | No SVHC (20-Jun-2011) |
| Current Id Max | 490mA |
| Package / Case | SOT-363 |
| Power Dissipation Pd | 410mW |
| Termination Type | SMD |
| Transistor Type | Enhancement |
| Voltage Vds Typ | 60V |
| Voltage Vgs Max | 20V |
| Voltage Vgs Rds on Measurement | 10V |
PMGD780SN,115NexperiaMOSFETs