Характеристики
| Transistor Polarity | PNP |
| Collector Emitter Voltage V(br)ceo | 45V |
| Power Dissipation Pd | 200mW |
| DC Collector Current | -100mA |
| DC Current Gain hFE | 290hFE |
| Transistor Case Style | SOT-666 |
| No. of Pins | 6Pins |
| Operating Temperature Max | 150°C |
| Product Range | - |
| Automotive Qualification Standard | - |
| MSL | MSL 1 - Unlimited |
| SVHC | No SVHC (15-Jan-2018) |
| Collector Emitter Saturation Voltage Vce(on) | 200mV |
| Current Ic Continuous a Max | 100mA |
| Current Ic hFE | 2mA |
| Gain Bandwidth ft Min | 100MHz |
| Gain Bandwidth ft Typ | 175MHz |
| Hfe Min | 200 |
| Module Configuration | Dual |
| Operating Temperature Min | -65°C |
| Operating Temperature Range | -65°C to +150°C |
| Power Dissipation Ptot Max | 200mW |
| Power Dissipation per device Max | 300mW |
| SMD Marking | EC |
| Transition Frequency ft | 175MHz |
| Voltage Vcbo | 45V |
PDFPMP5201V,115NexperiaBJTs