PT100MC0MP
Sharp
Phototransistor
PHOTOTRANSISTOR, SMD
Характеристики
| Transistor Polarity | NPN |
| Wavelength Typ | 900nm |
| Power Consumption | 75mW |
| Viewing Angle | 15° |
| No. of Pins | 2 |
| Collector Emitter Voltage Vces | 0.4V |
| Continuous Collector Current Ic Max | 5.1mA |
| Current Ic Typ | 2.9mA |
| Dark Current | 100nA |
| Fall Time tf | 6µs |
| Half Angle | 15° |
| Nom Sensitivity @ mW/cm² | 2.9mA @ 1mW / cm² |
| Operating Temperature Max | 85°C |
| Operating Temperature Min | -30°C |
| Operating Temperature Range | -30°C to +85°C |
| Package / Case | SMD Compact Thin |
| Peak Wavelength | 900nm |
| Power Dissipation Pd | 75mW |
| Power Dissipation Pd | 75mW |
| Rise Time | 5µs |
| Storage Temperature Max | 95°C |
| Storage Temperature Min | -40°C |
| Termination Type | SMD |
| Transistor Type | Photo |
PT100MC0MPSharpPhototransistor