PT480FE0000F
Sharp
Phototransistor
PHOTOTRANSISTOR
Характеристики
| Transistor Polarity | NPN |
| Wavelength Typ | 860nm |
| Power Consumption | 75mW |
| Transistor Case Style | Side Looking |
| No. of Pins | 2 |
| SVHC | No SVHC (15-Dec-2010) |
| Collector Emitter Voltage Vces | 0.4V |
| Continuous Collector Current Ic Max | 3mA |
| Current Ic Typ | 0.8mA |
| Dark Current | 100nA |
| External Depth | 2.8mm |
| External Length / Height | 4.0mm |
| External Width | 3mm |
| Fall Time tf | 3.5µs |
| Half Angle | 13° |
| Lead Diameter | 0.4mm |
| Lead Length | 17.5mm |
| Lead Spacing | 2.54mm |
| Nom Sensitivity @ mW/cm² | 800µmA @ 1mW / cm² |
| Operating Temperature Max | +85°C |
| Operating Temperature Min | -25°C |
| Operating Temperature Range | -25°C to +85°C |
| Package / Case | Radial |
| Peak Wavelength | 860nm |
| Power Dissipation Pd | 75mW |
| Power Dissipation Pd | 75mW |
| Reverse Protection Voltage | 6V |
| Rise Time | 3µs |
| Storage Temperature Max | +85°C |
| Storage Temperature Min | -40°C |
| Termination Type | Radial Leaded |
| Transistor Type | Photo |
PT480FE0000FSharpPhototransistor