Характеристики
| Digital Transistor Polarity | NPN and PNP Complement |
| Collector Emitter Voltage V(br)ceo | 50V |
| Continuous Collector Current Ic | 100mA |
| Base Input Resistor R1 | 10kohm |
| Base-Emitter Resistor R2 | 47kohm |
| Resistor Ratio, R1 / R2 | - |
| RF Transistor Case | SOT-363 |
| No. of Pins | 6 Pin |
| Product Range | PUMD9 Series |
| Automotive Qualification Standard | - |
| MSL | MSL 1 - Unlimited |
| SVHC | No SVHC (27-Jun-2018) |
| Collector Emitter Saturation Voltage Vce(on) | 100mV |
| Continuous Collector Current Ic Max | 100A |
| Current Ic Continuous a Max | 100A |
| Current Ic hFE | 5mA |
| DC Collector Current | 100mA |
| DC Current Gain hFE | 100hFE |
| Full Power Rating Temperature | 25°C |
| Hfe Min | 100 |
| Module Configuration | Dual |
| No. of Pins | 6Pins |
| No. of Transistors | 2 |
| Operating Temperature Max | 150°C |
| Operating Temperature Min | -65°C |
| Operating Temperature Range | -65°C to +150°C |
| Power Dissipation Pd | 200mW |
| Power Dissipation Ptot Max | 300mW |
| Resistance R1 | 10kohm |
| Resistance R1 PNP | 10kohm |
| Resistance R2 | 47kohm |
| Transistor Case Style | SOT-363 |
PUMD9,115NexperiaBJTs