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RN4988FELF

RN4988FELF

Toshiba Electronic Devices & Storage Corporation
BJTs
Digital Transistors NPN + PNP BRT, Q1BSR=22kOhm, Q1BER=47kOhm, Q2BSR=22kOhm, Q2BER=47kOhm, VCEO=50V, IC=0.1A
RN4988FELFPDF
RN4988FELFToshiba Electronic Devices & Storage CorporationBJTs