Характеристики
| Transistor Type | IGBT Module |
| Transistor Polarity | N Channel |
| Voltage, Vces | 1700V |
| Current Ic Continuous a Max | 650A |
| Voltage, Vce Sat Max | 2.45V |
| Case Style | SEMiX 3s |
| Termination Type | Screw |
| Collector-to-Emitter Breakdown Voltage | 1.2V |
| Current Ic av | 650A |
| Current, Icm Pulsed | 900A |
| Current, Ifs Max | 2900A |
| Time, Rise | 90ns |
| Voltage, Vrrm | 1700V |
SEMIX653GB176HDSSemikronIGBTs