SI2301/AP2301/2301/CJ2301
INITIO
MOSFETs
350mW 8V 1V 10nC@ 4.5V 2individualPChannel 20V 390mΩ@ 10V,7.1A 2.3A 405pF@10V SOT-23
Характеристики AI
| Power | 350mW |
| Drain-Source Voltage | 20V |
| Gate-Source Voltage | 8V |
| Threshold Voltage | 1V |
| Gate Charge | 10nC@4.5V |
| On-Resistance | 390mΩ@10V |
| Continuous Drain Current | 7.1A |
| Pulsed Drain Current | 2.3A |
| Input Capacitance | 405pF@10V |
| Package | SOT-23 |
| Channel Type | 2 individual P-Channel |
SI2301/AP2301/2301/CJ2301INITIOMOSFETs