Характеристики
| Transistor Polarity | P Channel |
| Drain Source Voltage Vds | -30V |
| On Resistance Rds(on) | 73mohm |
| Rds(on) Test Voltage Vgs | -10V |
| Power Dissipation Pd | 1.1W |
| Operating Temperature Range | -55°C to +150°C |
| Transistor Case Style | SOT-23 |
| No. of Pins | 3 |
| SVHC | No SVHC (20-Jun-2011) |
| Current Id Max | -3.5A |
| Power Dissipation Pd | 1.1W |
| Voltage Vgs Max | 20V |
SI2307CDS-T1-GE3VishayMOSFETs