Характеристики
| Transistor Polarity | N Channel |
| Continuous Drain Current Id | 6.7A |
| Drain Source Voltage Vds | 20V |
| On Resistance Rds(on) | 33mohm |
| Rds(on) Test Voltage Vgs | 8V |
| Threshold Voltage Vgs Typ | 1V |
| Power Dissipation Pd | 2W |
| Operating Temperature Range | -55°C to +150°C |
| Transistor Case Style | TSOP |
| No. of Pins | 6 |
| SVHC | No SVHC (20-Jun-2011) |
| Base Number | 3460 |
| Current Id Max | 8A |
| N-channel Gate Charge | 9nC |
| Output Current Max | 2A |
| P Channel Gate Charge | 9nC |
| Package / Case | TSOP |
| Power Dissipation Pd | 2W |
| Power Dissipation Pd | 20mW |
| Pulse Current Idm | 20A |
| Termination Type | SMD |
| Voltage Vds Typ | 20V |
| Voltage Vgs Max | 1V |
| Voltage Vgs Rds on Measurement | 4.5V |
SI3460BDV-T1-E3VishayMOSFETs