SJEP120R050

Power Integrations
Diodes
SiC MOSTube,encapsulation:TO-247/TO-3P,N,Withstand Voltage:1200v,Current:60A,Rds10vInternal Resistance:0.055Ω,power:280W,Vgs(±)CISS(typ):2250PF;
SJEP120R050Power IntegrationsDiodes