Характеристики
| Transistor Type | IGBT Module |
| Transistor Polarity | N Channel |
| Voltage, Vces | 1700V |
| Current Ic Continuous a Max | 125A |
| Voltage, Vce Sat Max | 2.45V |
| Case Style | SEMITRANS 2 |
| Termination Type | Screw |
| Collector-to-Emitter Breakdown Voltage | 1700V |
| Current Ic Continuous b Max | 90A |
| Current Ic av | 125A |
| Current, Icm Pulsed | 100A |
| External Depth | 35mm |
| Fixing Centres | 80mm |
| Fixing Hole Diameter | 6.4mm |
| SMD Marking | SEMITRANS 2 |
| Temperature, Current | 25°C |
| Time, Rise | 140ns |
| Transistors, No. of | 2 |
| Width, External | 90mm |
| Voltage | 1700V |
SKM100GB176DSemikronElectronic Components