Характеристики
| Transistor Type | IGBT Module |
| Max Voltage Vce Sat | 2.15V |
| Collector-to-Emitter Breakdown Voltage | 1200V |
| Av Current Ic | 310A |
| Case Style | SEMITRANS 3 |
| Current Temperature | 25°C |
| External Depth | 61.4mm |
| External Width | 105mm |
| Fixing Centres | 93mm |
| Fixing Hole Diameter | 5.4mm |
| Max Current Ic Continuous a | 310A |
| Max Current Ic Continuous b | 200A |
| No. of Transistors | 2 |
| Pulsed Current Icm | 400A |
| Rise Time | 110ns |
| SMD Marking | SEMITRANS 3 |
| Termination Type | Screw |
| Transistor Polarity | N Channel |
| Voltage Vces | 1200V |
| Voltage | 1200V |
SKM300GB126DSemikronIGBTs