Характеристики
| Transistor Type | IGBT Module |
| Transistor Polarity | N Channel |
| Voltage, Vces | 1200V |
| Current Ic Continuous a Max | 40A |
| Voltage, Vce Sat Max | 3.3V |
| Case Style | SEMITRANS 6 |
| Termination Type | Screw |
| Collector-to-Emitter Breakdown Voltage | 1200V |
| Current Ic Continuous b Max | 25A |
| Current Ic av | 40A |
| Current, Icm Pulsed | 70A |
| External Depth | 45mm |
| External Length / Height | 24mm |
| Fixing Centres | 93mm |
| Fixing Hole Diameter | 5.5mm |
| Power, Pd | 200W |
| Power, Ptot | 200W |
| Temperature, Current | 25°C |
| Time, Rise | 55ns |
| Transistors, No. of | 6 |
| Width, External | 105mm |
SKM40GD123DSemikronTransistors