Характеристики
| Transistor Type | IGBT Module |
| Transistor Polarity | N Channel |
| Voltage, Vces | 1200V |
| Current Ic Continuous a Max | 75A |
| Voltage, Vce Sat Max | 3.2V |
| Case Style | SEMITRANS 2 |
| Termination Type | Screw |
| Collector-to-Emitter Breakdown Voltage | 1200V |
| Current Ic Continuous b Max | 50A |
| Current Ic av | 78A |
| Current, Icm Pulsed | 150A |
| External Depth | 34mm |
| External Length / Height | 29.5mm |
| Fixing Centres | 80mm |
| Fixing Hole Diameter | 6.4mm |
| Power, Pd | 400W |
| Power, Ptot | 400W |
| Temperature, Current | 25°C |
| Time, Rise | 56ns |
| Transistors, No. of | 2 |
| Width, External | 94mm |
SKM75GB123DSemikronIGBTs