Характеристики
| Transistor Polarity | N Channel |
| Continuous Drain Current Id | 5.2A |
| Drain Source Voltage Vds | 800V |
| On Resistance Rds(on) | 1.8ohm |
| Rds(on) Test Voltage Vgs | 10V |
| Threshold Voltage Vgs Typ | 3.75V |
| Power Dissipation Pd | 125W |
| Operating Temperature Range | -55°C to +150°C |
| Transistor Case Style | TO-220 |
| No. of Pins | 3 |
| SVHC | No SVHC (20-Jun-2011) |
| Alternate Case Style | SOT-78B |
| Avalanche Single Pulse Energy Eas | 210mJ |
| Capacitance Ciss Typ | 1138pF |
| Current Id Max | 5.2A |
| Current Temperature | 25°C |
| Full Power Rating Temperature | 25°C |
| Lead Spacing | 2.54mm |
| No. of Transistors | 1 |
| On State resistance @ Vgs = 10V | 1.8ohm |
| Package / Case | TO-220 |
| Pin Configuration | a |
| Power Dissipation Pd | 125W |
| Power Dissipation Pd | 125W |
| Power Dissipation Ptot Max | 125W |
| Pulse Current Idm | 20.8A |
| Reverse Recovery Time trr Typ | 530ns |
| Termination Type | Through Hole |
| Voltage Vds Typ | 800V |
| Voltage Vgs Max | 30V |
| Voltage Vgs Rds on Measurement | 10V |
| Voltage Vgs th Max | 4.5V |
| Voltage Vgs th Min | 3V |
STP7NK80ZSTMicroelectronicsMOSFETs