Характеристики
| Transistor Polarity | P Channel |
| Drain Source Voltage Vds | -80V |
| On Resistance Rds(on) | 9.3mohm |
| Rds(on) Test Voltage Vgs | -10V |
| Power Dissipation Pd | 13.6W |
| Operating Temperature Range | -55°C to +175°C |
| Transistor Case Style | TO-263 |
| No. of Pins | 3 |
| Current Id Max | -23.5A |
| Power Dissipation Pd | 13.6W |
| Voltage Vgs Max | -20V |
PDFSUM110P08-11L-E3VishayMOSFETs