TK10E60WS1VX(S

Toshiba Electronic Devices & Storage Corporation
MOSFETs
Mosfet, N-Ch, 600V, 9.7A, To-220, Channel Type:N Channel, Drain Source Voltage Vds:600V, Continuous Drain Current Id:9.7A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3.7V Rohs Compliant: Yes
TK10E60WS1VX(SToshiba Electronic Devices & Storage CorporationMOSFETs