Характеристики
| Transistor Type | General Purpose |
| Transistor Polarity | Dual PNP |
| Collector-to-Emitter Breakdown Voltage | 50V |
| Current Ic Continuous a Max | 5mA |
| Voltage, Vce Sat Max | -300mV |
| Power Dissipation | 150mW |
| RoHS Compliant | Yes |
UMB3NTNROHMBJTs
| Transistor Type | General Purpose |
| Transistor Polarity | Dual PNP |
| Collector-to-Emitter Breakdown Voltage | 50V |
| Current Ic Continuous a Max | 5mA |
| Voltage, Vce Sat Max | -300mV |
| Power Dissipation | 150mW |
| RoHS Compliant | Yes |